Circuit and method for reading a toggle memory cell
US6744663B2 · kind B2 · utility
14Cited by
11References
24Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 28, 2002 |
| Grant date | Jun 1, 2004 |
| Priority date | — |
| Expiry date | Jul 3, 2022 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C11/1675
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A MRAM toggle type memory cell is read by first providing a first signal representative of the initial state to a sense amplifier (1300, 1500). A resistance of the cell is temporarily changed by altering a magnetic polarization of the free layer of the cell. A second signal responsive to altering the resistance of the MRAM cell is provided to the sense amplifier (1300, 1500). The first signal is compared to the second signal to determine the state of the MRAM cell.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.