Method and structure for nitride based laser diode arrays on an insulating substrate
US6744800B1 · kind B1 · utility
25Cited by
8References
19Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 30, 1998 |
| Grant date | Jun 1, 2004 |
| Priority date | — |
| Expiry date | Dec 30, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H29/14
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A method and structure for nitride based laser diode arrays on an insulating substrate is described. Various contact layouts are used to reduce electrical and thermal crosstalk between laser diodes in the array. A channel structure is used to make a surface emitting laser diode while maintaining a simple contact structure. Buried layers are used to provide a compact and low crosstalk contact structure for the laser diode array.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.