Scanning probe microscope
US6745618B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 12, 2002 |
| Grant date | Jun 8, 2004 |
| Priority date | — |
| Expiry date | Jul 12, 2022 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S977/87
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A scanning probe microscope includes a laser diode (1a) as a light source for emitting light lower in energy level than band gap of semiconductor as a sample. Laser light (2) emitted therefrom should be of wavelength larger in value than a wavelength &lgr; calculated as follows:&lgr;=h·c/Egwhere h is Planck's constant, c represents speed of light and Eg represents band gap. When the semiconductor as a sample is silicon, the band gap thereof is 1.12 eV, thus calculating the wavelength &lgr; at 1.107 &mgr;m. The laser diode (1a) should be such that the laser light (2) emitted therefrom is of wavelength larger in value than &lgr;. It is therefore allowed to avoid emission of light higher in energy level than the band gap of silicon as a sample and eventually, avoid generation of photoelectric current in the sample.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.