Resist composition and patterning process
US6746817B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 31, 2001 |
| Grant date | Jun 8, 2004 |
| Priority date | — |
| Expiry date | Mar 8, 2022 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S430/115
- WIPO fieldMacromolecular chemistry, polymers
- WIPO sectorChemistry
Abstract
A polymer comprises recurring units of formula (1) and recurring units having acid labile groups which units increase alkali solubility as a result of the acid labile groups being decomposed under the action of acid, and has a Mw of 1,000-500,000. R1 and R2 each are hydrogen, hydroxyl, hydroxyalkyl, alkyl, alkoxy or halogen, and n is 0, 1, 2, 3 or 4. The polymer is useful as a base resin to form a chemically amplified, positive resist composition which has advantages including a significantly enhanced contrast of alkali dissolution rate before and after exposure, high sensitivity, high resolution, and high etching resistance and is best suited as a micropatterning material for use in VLSI manufacture.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.