Encapsulation of ferroelectric capacitors
US6746877B1 · kind B1 · utility
12Cited by
13References
16Claims
0Family size
Assignee
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Key dates
| Filing date | Jan 7, 2003 |
| Grant date | Jun 8, 2004 |
| Priority date | — |
| Expiry date | Jan 7, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/714
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A ferroelectric capacitor encapsulation method for preventing hydrogen damage to electrodes and ferroelectric material of the capacitor. In general terms, the method for encapsulating a capacitor includes etching a bottom electrode of a capacitor to expose an underlying wafer surface. An undercut is etched between the capacitor and the wafer surface. The undercut is refilled with a barrier layer to reduce the diffusion of hydrogen from the surface of the wafer into the capacitor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.