Metal sandwich structure for MIM capacitor onto dual damascene

US6746914B2 · kind B2 · utility

Assignee

• Chartered Semiconductor Manufacturing LTD · SG

Inventors

• Shao Kai · Shanghai, CN
• Ng Chit Hwei · Singapore, SG
• Sanford Chu · Singapore, SG

Key dates

• Filing date: May 7, 2002
• Grant date: Jun 8, 2004
• Expiry date: May 7, 2022

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/76838
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A first and second damascene copper interconnect plug are created over the surface of a substrate. A MIM capacitor, which is aligned with the second damascene copper interconnect plug, is created by a one-time etch of a stack of layers comprising Ta/capacitor dielectric/Ta. Copper interconnects are then created aligned with the MIM capacitor and the second damascene interconnect plug.