Circuit for non-destructive, self-normalizing reading-out of MRAM memory cells

US6747891B2 · kind B2 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Kurt Hoffmann · Taufkirchen, DE
• Oskar Kowarik · Grafing, DE

Key dates

• Filing date: May 29, 2003
• Grant date: Jun 8, 2004
• Expiry date: May 29, 2023

Classification

• Technology area (CPC G): Physics
• CPC primary: G11C11/1673
• WIPO field: Computer technology
• WIPO sector: Electrical engineering

Abstract

A circuit is provided for the non-destructive, self-normalizing reading-out of MRAM memory cells. Accordingly, read currents of a memory cell are normalized by currents that are maintained at a voltage at which the size of these currents is independent of the cell content. The circuit has a simple construction and without great expenditure, permits the normalization of a read signal.