Abatement of effluents from chemical vapor deposition processes using organometallic source reagents
US6749671B2 · kind B2 · utility
370Cited by
20References
20Claims
0Family size
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Key dates
| Filing date | Feb 5, 2003 |
| Grant date | Jun 15, 2004 |
| Priority date | — |
| Expiry date | Feb 5, 2023 |
Classification
- Technology area (CPC B)Performing Operations; Transporting
- CPC primaryB01D2259/40098
- WIPO fieldChemical engineering
- WIPO sectorChemistry
Abstract
A method and apparatus for abatement of effluent from a CVD process using a source reagent having a metal organic loosely bound to a organic or organometallic molecule such that upon exposure to heat such bond is readily cleavable, e.g., copper deposition process involving the formation of films on a substrate by metalorganic chemical vapor deposition (CVD) utilizing a precursor composition for such film formation. The abatement process in specific embodiments facilitates high efficiency abatement of effluents from copper deposition processes utilizing Cu(hfac)TMVS as a copper source reagent.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.