Crystal growth method of an oxide and multi-layered structure of oxides
US6749686B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 19, 2002 |
| Grant date | Jun 15, 2004 |
| Priority date | — |
| Expiry date | Dec 11, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02192
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
An epitaxial rare earth oxide (110)/silicon (001) structure is realized by epitaxially growing a rare earth oxide such as cerium dioxide in the (110) orientation on a (001)-oriented silicon substrate at a growth temperature lower than conventional ones. For this purpose, the surface of the (001)-oriented Si substrate is processed into a dimer structure by 2×1, 1×2 surface reconstruction, and a rare earth oxide of a cubic system or a tetragonal system, such as CeO2 film, is epitaxially grown in the (110) orientation on the Si substrate in an atmosphere containing an oxidic gas by using a source material made up of at least one kind of rare earth element. During this growth, a source material containing at least one kind of rare earth element is supplied after the supply of an oxidic gas is supplied onto the surface of the Si substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.