System and method for analyzing a semiconductor surface
US6749715B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 24, 2001 |
| Grant date | Jun 15, 2004 |
| Priority date | — |
| Expiry date | Jan 25, 2022 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01N35/1095
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A method and apparatus for analyzing a semiconductor surface obtains a sample from a localized section of a wafer. The sample is obtained by isolating a section of a wafer with a sampling apparatus, dispensing liquid onto the isolated section of the wafer, dissolving compounds of interest in the liquid, removing a portion of the liquid, and analyzing the liquid and dissolved compounds of interest. The liquid can be an etching solution, an organic solvent, or other suitable solvent. Samples and analyses can, thus, be obtained as a function of position on the wafer. Analyses as a function of depth can also be determined by sampling and analyzing an isolated portion of the wafer as a function of time.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.