Reflection type mask blank for EUV exposure and reflection type mask for EUV exposure as well as method of producing the mask
US6749973B2 · kind B2 · utility
5Cited by
2References
11Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 14, 2002 |
| Grant date | Jun 15, 2004 |
| Priority date | — |
| Expiry date | Jul 13, 2022 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F1/24
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
In a reflection type mask blank for EUV exposure, a multilayer film is formed on a substrate to reflect EUV light. An intermediate layer is formed on the multilayer film. An absorber layer is formed on the intermediate layer to absorb the EUV light. The intermediate layer is formed by a material containing Cr and at least one element selected from the group consisting of N, O, and C.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.