Methods of forming ruthenium film by changing process conditions during chemical vapor deposition and ruthenium films formed thereby
US6750092B2 · kind B2 · utility
11Cited by
12References
25Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 21, 2000 |
| Grant date | Jun 15, 2004 |
| Priority date | — |
| Expiry date | May 27, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/682
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A ruthenium (Ru) film is formed on a substrate as part of a two-stage methodology. During the first stage, the Ru film is formed on the substrate in a manner in which the Ru nucleation rate is greater than the Ru growth rate. During the second stage, the Ru film is formed on the substrate in a manner in which the Ru growth rate is greater than the Ru nucleation rate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.