Method for fabricating asymmetric inner structure in contacts or trenches
US6750116B1 · kind B1 · utility
Assignee
Inventor
Key dates
| Filing date | Jul 14, 2003 |
| Grant date | Jun 15, 2004 |
| Priority date | — |
| Expiry date | Jul 14, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76831
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention provides a method for making an asymmetric inner structure in a contact or trench having a first sidewall, second sidewall, and a bottom in a semiconductor layer. A conformal dielectric layer is deposited on the interior surface of the contact or trench covering the first sidewall, second sidewall, and the bottom. A title angle ion implantation process is carried out to implant ions into the dielectric layer on the first sidewall and the bottom, but not the dielectric layer on the second sidewall. Thereafter, the doped dielectric layer on the first sidewall and the bottom is selectively etched away and leaving the un-doped dielectric layer on the second sidewall intact.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.