Direct patterning of nanometer-scale silicide structures on silicon by ion-beam implantation through a thin barrier layer
US6750124B1 · kind B1 · utility
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Key dates
| Filing date | Feb 6, 2002 |
| Grant date | Jun 15, 2004 |
| Priority date | — |
| Expiry date | Feb 6, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/28518
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Direct focused ion beam (FIB) mixing is given as a method for patterning of metal silicide structures on a silicon surface. This technique allows the fabrication of submicron structures without the use of resist-based lithography methods. VLSI containing metal silicide connects, interconnects and structures may be prepared by the method. Fast semiconductor devices having good circuit speed and reduced RC time delay including the technologies MEMS, MOSFET, CMOS, pMOS, nMOS and BiCMOS result.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.