Method for producing a semiconductor device
US6750158B2 · kind B2 · utility
20Cited by
2References
12Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 15, 2002 |
| Grant date | Jun 15, 2004 |
| Priority date | — |
| Expiry date | May 15, 2022 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/977
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A first semiconductor layer is formed on a mother substrate, and the mother substrate is irradiated with irradiation light from a surface opposite to the first semiconductor layer, so that a thermally decomposed layer formed by thermally decomposing the first semiconductor layer between the first semiconductor layer and the mother substrate. Then, a second semiconductor layer including an active layer is formed on the first semiconductor layer in which the thermally decomposed layer is formed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.