Method for adaptively writing a magnetic random access memory
US6751147B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 5, 2003 |
| Grant date | Jun 15, 2004 |
| Priority date | — |
| Expiry date | Aug 5, 2023 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C11/15
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A method of adaptively writing magnetic memory cells of a MRAM is disclosed according to an embodiment of the present invention. The method comprises providing a logical data block of a memory array having magnetic memory cells, each magnetic memory cell in a known initial state and each magnetic memory cell configured along an easy-axis magnetic field generating conductor and writing to the magnetic memory cells using a predefined minimum current level. The method may further comprise sensing the magnetic memory cells to determine if data has been successfully written, incrementing the current level if writing was unsuccessful and repeating above.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.