Method and apparatus device for the heat treatment of substrates
US6752625B1 · kind B1 · utility
8Cited by
9References
12Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 13, 2000 |
| Grant date | Jun 22, 2004 |
| Priority date | — |
| Expiry date | Nov 13, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/67115
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The invention relates to a device and a method for the heat treatment of substrates, especially semiconductor wafers. The device comprises a reaction chamber with a compensation element. According to the invention the substrate can be inserted and withdrawn again more easily by the fact that the compensation element (15) can be at least partly lowered and/or raised in the reaction chamber.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.