Patent · US Expired

Method for manufacturing a structure comprising a substrate with a cavity and a semiconductor integrated circuit bonded to a contact pad located in the cavity

US6753205B2 · kind B2 · utility

64Cited by
151References
16Claims
0Family size

Assignee

Inventor

Key dates

Filing dateJan 27, 2003
Grant dateJun 22, 2004
Priority date
Expiry dateJan 27, 2023

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L2924/19107
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

Semiconductor dies are bonded to contact pads formed in a substrate's cavity. Vias through the substrate open into the cavity. Conductive lines passing through the vias connect the contact pads in the cavity to contact pads on another side of the substrate. A passage in the substrate opens into the cavity and provides an escape or pressure relief path for material filling the cavity. The passage can also be used to introduce material into the cavity.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.