Methods for fabricating semiconductor devices having capacitors
US6753221B2 · kind B2 · utility
3Cited by
7References
25Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 17, 2002 |
| Grant date | Jun 22, 2004 |
| Priority date | — |
| Expiry date | Dec 17, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/682
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods for fabricating semiconductor devices having capacitors are provided. A plurality of storage node electrodes are formed on a semiconductor substrate. Then, a capacitor dielectric layer is formed over the storage node electrodes. A plate electrode layer is subsequently formed on the capacitor dielectric layer. A hard mask layer is then formed on the resultant structure where the plate electrode layer is formed so as to fill a gap between the adjacent storage node electrodes. The hard mask layer and the plate electrode layer are successively patterned to form a plate electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.