Capacitor of semiconductor device and method of fabricating the same
US6753564B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Feb 21, 2002 |
| Grant date | Jun 22, 2004 |
| Priority date | — |
| Expiry date | Dec 1, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/682
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A capacitor of a semiconductor device is provided which includes a semiconductor substrate and insulating interlayer formed on the semiconductor substrate. The insulating interlayer has a contact hole which exposes a portion of the semiconductor substrate. A plug fills in the contact hole and the plug comes into contact with the semiconductor substrate. A contact layer is formed on the insulating interlayer. The contact layer comes into contact with the plug. First and second barrier layers are formed on the surface and sides of the contact layer, and a lower electrode is formed on the first barrier layer. A dielectric layer formed on the second barrier layer and lower electrode, and an upper electrode is formed on the dielectric layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.