RF configuration in a plasma processing system
US6753689B1 · kind B1 · utility
5Cited by
5References
20Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Jun 24, 2002 |
| Grant date | Jun 22, 2004 |
| Priority date | — |
| Expiry date | Jun 24, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/32082
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
In one embodiment, a radio frequency (RF) configuration in a plasma processing system includes an RF electrode driven by an RF signal source and a non-RF electrode coupled to an electronic module. A filter coupled to the non-RF electrode is configured to provide maximum attenuation at or near an RF signal frequency, while allowing signals associated with the electronic module to pass. The filter may be placed as close to the non-RF electrode as possible. The filter may be, for example, a band stop filter such as a parallel resonant circuit having a resonant frequency at or near an RF signal frequency.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.