Micro-casted silicon carbide nano-imprinting stamp
US6755984B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 24, 2002 |
| Grant date | Jun 29, 2004 |
| Priority date | — |
| Expiry date | Nov 22, 2022 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/24479
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
A micro-casted silicon carbide nano-imprinting stamp and method of making a micro-casted silicon carbide nano-imprinting stamp are disclosed. A micro-casting technique is used to form a foundation layer and a plurality of nano-sized features connected with the foundation layer. The foundation layer and the nano-sized features are unitary whole that is made entirely from a material comprising silicon carbide (SiC) which is harder than silicon (Si) alone. As a result, the micro-casted silicon carbide nano-imprinting stamp has a longer service lifetime because it can endure several imprinting cycles without wearing out or breaking. The longer service lifetime makes the micro-casted silicon carbide nano-imprinting stamp economically feasible to manufacture as the manufacturing cost can be recouped over the service lifetime.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.