Stencil mask for high- and ultrahigh-energy implantation
US6756162B2 · kind B2 · utility
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8References
3Claims
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Key dates
| Filing date | Apr 30, 2002 |
| Grant date | Jun 29, 2004 |
| Priority date | — |
| Expiry date | Apr 30, 2022 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/24322
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A stencil mask for high- and ultrahigh-energy implantation of semiconductor wafers has a substrate with implantation openings through which the implantation energy can be projected onto a wafer that will be implanted. The critical dimension of the implantation openings is defined in a manner dependent on the respective implantation energy.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.