Producing self-aligned and self-exposed photoresist patterns on light emitting devices
US6756186B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 22, 2002 |
| Grant date | Jun 29, 2004 |
| Priority date | — |
| Expiry date | Aug 7, 2022 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S430/146
Abstract
A method of forming a photoresist mask on a light emitting device is disclosed. A portion of the light emitting device is coated with photoresist. A portion of the photoresist is exposed by light impinging on the interface of the light emitting device and the photoresist from inside the light emitting device. The photoresist is developed, removing either the exposed photoresist or the unexposed photoresist. In one embodiment, the photoresist mask may be used to form a phosphor coating. After the photoresist is developed to remove the exposed photoresist, a phosphor layer is deposited overlying the light emitting device. The unexposed portion of photoresist is stripped. In some embodiments, the light exposing the photoresist is produced by electrically biasing the light emitting device, or by shining light into the light emitting device through an aperture or by a focussed laser.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.