Lateral heterojunction bipolar transistor and method of fabricating the same
US6756278B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 11, 2002 |
| Grant date | Jun 29, 2004 |
| Priority date | — |
| Expiry date | Dec 25, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D10/80
Abstract
A lateral heterojunction bipolar transistor comprises a first semiconductor layer in a mesa configuration disposed on an insulating layer, a second semiconductor layer formed by epitaxial growth on the side surfaces of the first semiconductor layer and having a band gap different from that of the first semiconductor layer, and a third semiconductor layer formed by epitaxial growth on the side surfaces of the second semiconductor layer and having a band gap different from that of the second semiconductor layer. The first semiconductor layer serves as a collector of a first conductivity type. At least a part of the second semiconductor layer serves as an internal base layer of a second conductivity type. At least a part of the third semiconductor layer serves as an emitter operating region of the first conductivity type. The diffusion of an impurity is suppressed in the internal base formed by epitaxial growth.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.