Feed forward process control method for adjusting metal line Rs
US6756309B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 30, 2003 |
| Grant date | Jun 29, 2004 |
| Priority date | — |
| Expiry date | Jan 30, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/7684
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for achieving a predetermined electrical resistance of a semiconductor device metal line in a CMP process including providing a semiconductor process wafer comprising at least one dielectric layer for etching an opening through a thickness of the at least one dielectric layer; measuring a thickness of the at least one dielectric layer prior to etching the opening; etching the opening through a thickness of the at least one dielectric layer; measuring at least one dimension of the opening from which at least an opening depth is determined; forming a metal layer to fill the opening; and, performing a chemical mechanical polish (CMP) process to remove at least the metal layer overlying the opening level to form a metal filled opening according to a projected metal filled opening electrical resistance.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.