Method for forming a capping layer over a low-k dielectric with improved adhesion and reduced dielectric constant
US6756321B2 · kind B2 · utility
25Cited by
9References
19Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 5, 2002 |
| Grant date | Jun 29, 2004 |
| Priority date | — |
| Expiry date | Oct 5, 2022 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/902
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for forming a capping layer for improved adhesion with an underlying insulating layer in a multiple layer semiconductor device manufacturing process including providing a semiconductor wafer including a process surface comprising a dielectric insulating layer; and, providing a capping layer overlying the dielectric insulating layer according to a chemical vapor deposition CVD) process. The capping layer of the present invention has improved adhesion and a reduced dielectric constant with comparable current leakage compared to capping layers of the prior art.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.