Method for producing a long wavelength indium gallium arsenide nitride(InGaAsN) active region
US6756325B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 7, 2002 |
| Grant date | Jun 29, 2004 |
| Priority date | — |
| Expiry date | Oct 12, 2022 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/956
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Several methods for producing an active region for a long wavelength light emitting device are disclosed. In one embodiment, the method comprises placing a substrate in an organometallic vapor phase epitaxy (OMVPE) reactor, the substrate for supporting growth of an indium gallium arsenide nitride (InGaAsN) film, supplying to the reactor a group-III-V precursor mixture comprising arsine, dimethylhydrazine, alkyl-gallium, alkyl-indium and a carrier gas, where the arsine and the dimethylhydrazine are the group-V precursor materials and where the percentage of dimethylhydrazine substantially exceeds the percentage of arsine, and pressurizing the reactor to a pressure at which a concentration of nitrogen commensurate with light emission at a wavelength longer than 1.2 um is extracted from the dimethylhydrazine and deposited on the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.