Thin film semiconductor device, polycrystalline semiconductor thin film production process and production apparatus
US6756614B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 26, 2001 |
| Grant date | Jun 29, 2004 |
| Priority date | — |
| Expiry date | Jun 30, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02691
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In an MIS field effect transistor having a gate electrode formed on a first semiconductor layer which is a polycrystalline silicon film on an insulating substrate through a gate insulating film, a channel region formed in the semiconductor layer and a source region and a drain region arranged on both sides of the channel region, a thin film semiconductor device has a main orientation of at least the channel region of {110} with respect to the surface of the gate insulating film. Further, a polycrystalline semiconductor film having a main orientation of the surface almost perpendicular to a direction for connecting the source and drain regions of {100} is preferably used in the channel of a semiconductor device. According to the present invention, a semiconductor device having a high-quality polycrystalline semiconductor film whose grain boundary, grain size and crystal orientation can be controlled and whose film roughness and crystal defects formed by crystallization have been reduced can be obtained on the insulating substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.