Magnetic random access memory with memory cells of different resistances connected in series and parallel
US6757189B2 · kind B2 · utility
19Cited by
5References
34Claims
0Family size
Assignee
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Key dates
| Filing date | Apr 24, 2003 |
| Grant date | Jun 29, 2004 |
| Priority date | — |
| Expiry date | Apr 24, 2023 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C11/5607
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
High density magnetic random access memory (MRAM) is disclosed. In the MRAM, by using the multi-layered magnetic materials with different resistance characteristics, the magnetic tunnel junction (MTJ) cells are connected in parallel or in series, which are connected to a transistor, so as to be a control element for reading data without complicated reading procedure and timing, resulting in high density package of MRAM.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.