Process monitoring methods in a plasma processing apparatus, monitoring units, and a sample processing method using the monitoring units
US6759253B2 · kind B2 · utility
15Cited by
1References
33Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 16, 2001 |
| Grant date | Jul 6, 2004 |
| Priority date | — |
| Expiry date | Jun 29, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
The intensity of the light emitted from the light-emitting diode on wafer is measured and then the potential difference between the terminals of the light-emitting element, and the plasma current flowing thereinto are derived from measured light intensity. Since the use of a camera enables non-contact measurement of emitted light intensity, the lead-in terminals for lead wires that are always required in conventional probing methods become unnecessary. In addition, since the target wafer does not require lead wire connection, wafers can be changed in the same way as performed for etching.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.