Method for manufacturing semiconductor devices using thermal nitride films as gate insulating films
US6759314B1 · kind B1 · utility
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18References
15Claims
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Key dates
| Filing date | Sep 26, 2000 |
| Grant date | Jul 6, 2004 |
| Priority date | — |
| Expiry date | Sep 29, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/693
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A thermal nitride film is formed as a gate insulating film on a silicon substrate, and after a gate electrode material is formed on the insulating film, it is patterned to form gate electrodes. After processing the electrodes, part of the gate insulating film other than a portion thereof which lies under the gate electrodes is removed. Further, an insulating film (a post oxidation film) is formed on side walls and upper surfaces of the stacked gate structures and the exposed main surface of the silicon substrate by use of thermal oxidation method.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.