Method of depositing low k barrier layers
US6759327B2 · kind B2 · utility
22Cited by
57References
27Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 13, 2001 |
| Grant date | Jul 6, 2004 |
| Priority date | — |
| Expiry date | Nov 13, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76834
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method is provided for processing a substrate including providing a processing gas comprising an organosilicon compound comprising a phenyl group to the processing chamber, and reacting the processing gas to deposit a low k silicon carbide barrier layer useful as a barrier layer in damascene or dual damascene applications with low k dielectric materials.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.