Isolation of alpha silicon diode sensors through ion implantation

US6759724B2 · kind B2 · utility

Assignee

• AGILENT TECHNOLOGIES, INC. · US

Inventors

• Min Cao · Hsinchu, TW
• Jeremy Alfred Theil · Mountain View, US
• Gary W. Ray · Mountain View, US
• Dietrich W. Vook · Los Altos, US

Key dates

• Filing date: Jan 22, 2003
• Grant date: Jul 6, 2004
• Expiry date: Mar 14, 2023

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10F39/191

Abstract

An image sensor. The image sensor array includes a substrate. An interconnect structure is formed adjacent to the substrate. An amorphous silicon electrode layer is adjacent to the interconnect structure. The amorphous silicon electrode layer includes electrode ion implantation regions between pixel electrode regions. The pixel electrode regions define cathodes of an array of image sensors. The electrode ion implantation regions provide physical isolation between the pixel electrode regions. The cathodes are electrically connected to the interconnect structure. An amorphous silicon I-layer is adjacent to the amorphous silicon electrode layer. The amorphous silicon I-layer forms an inner layer of each of the image sensors. A transparent electrode layer is formed adjacent to the image sensors. An inner surface of the transparent electrode is electrically connected to anodes of the image sensors and the interconnect structure. The amorphous silicon I-layer region can further include I-layer ion implantation regions that provide physical isolation between the inner layers of the image sensors. The I-layer ion implantation regions align with the electrode ion implantation regions. An am…