Erase of a non-volatile memory
US6760270B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 30, 2002 |
| Grant date | Jul 6, 2004 |
| Priority date | — |
| Expiry date | Nov 27, 2022 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C16/14
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
An erase of a non-volatile memory (NVM) is achieved by first using oxide tunneling followed by hot hole injection (HHI). The subsequent use of HHI completes the erase that the tunneling cannot complete due to saturation. By first using tunneling, preferably Fowler-Nordheim tunneling (FNT), the damage to a bottom dielectric that normally occurs by HHI is significantly reduced. The damage due to HHI is significantly greater at the beginning of the erase when the electric field is greater. By reducing the damage due to HHI, the bottom dielectric can be smaller than that normally used for HHI so that high voltages are not required. Accordingly, the transistors in the periphery do not need to be so oversized as is normally required for HHI and thus saving area and power.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.