Inventor · Austin, TX, US

James D. Burnett

60Patents
14h-index
58Co-inventors
87Inventor score

Filing activity: Apr 8, 1977 → Aug 14, 2015

Most-cited inventions

PatentTitleAreaCited byStatus
US6861689B2 One transistor DRAM cell structure and method for forming Physics 150 Expired
US6714436B1 Write operation for capacitorless RAM Electricity 130 Expired
US7238990B2 Interlayer dielectric under stress for an integrated circuit Emerging Cross-Sectional Technologies 39 Expired
US7285832B2 Multiport single transistor bit cell Emerging Cross-Sectional Technologies 32 Expired
US5541132A Insulated gate semiconductor device and method of manufacture Emerging Cross-Sectional Technologies 32 Expired
US7085175B2 Word line driver circuit for a static random access memory and method therefor Physics 30 Expired
US7292495B1 Integrated circuit having a memory with low voltage read/write operation Physics 25 Active
US4141322A Insecticidal collar for animals Human Necessities 23 Expired
US7709303B2 Process for forming an electronic device including a fin-type structure Electricity 20 Active
US7754560B2 Integrated circuit using FinFETs and having a static random access memory (SRAM) Electricity 19 Active
US7352631B2 Methods for programming a floating body nonvolatile memory Electricity 19 Expired
US7800959B2 Memory having self-timed bit line boost circuit and method therefor Physics 17 Active
US7238555B2 Single transistor memory cell with reduced programming voltages Physics 16 Expired
US7733711B2 Circuit and method for optimizing memory sense amplifier timing Physics 14 Active
US6327182A Semiconductor device and a method of operation the same Physics 14 Expired
US7542369B2 Integrated circuit having a memory with low voltage read/write operation Physics 13 Active
US7195983B2 Programming, erasing, and reading structure for an NVM cell Electricity 13 Expired
US8947970B2 Word line driver circuits and methods for SRAM bit cell with reduced bit line pre-charge voltage Physics 11 Active
US7452768B2 Multiple device types including an inverted-T channel transistor and method therefor Electricity 11 Expired
US6760270B2 Erase of a non-volatile memory Physics 9 Expired
US8156357B2 Voltage-based memory size scaling in a data processing system Emerging Cross-Sectional Technologies 9 Active
US7483327B2 Apparatus and method for adjusting an operating parameter of an integrated circuit Emerging Cross-Sectional Technologies 9 Active
US7968394B2 Transistor with immersed contacts and methods of forming thereof Electricity 8 Active
US7414877B2 Electronic device including a static-random-access memory cell and a process of forming the electronic device Electricity 8 Active
US7336533B2 Electronic device and method for operating a memory circuit Physics 8 Expired

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.