Apparatus and method for manufacturing a semiconductor circuit
US6762128B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 20, 2002 |
| Grant date | Jul 13, 2004 |
| Priority date | — |
| Expiry date | Jun 20, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02274
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method and an apparatus for manufacturing, via a single fabrication line, circuits that are radiation tolerant and also circuits that are radiation intolerant. When production calls for radiation-tolerant circuits, low-pressure chemical vapor deposition is advantageously used to deposit an electrically-insulating material, such as silicon dioxide, in trenches to provide electrical isolation between adjacent semiconductor devices. When production requires radiation-intolerant circuits, as may be required for export, then the trenches are filled via a procedure that deposits an electrically-insulating material that, on exposure to ionizing radiation, generates a suitably large amount of “positive charge traps.” One procedure suitable for creating such positive charge traps is high-density plasma chemical vapor deposition (HDPCVD).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.