Electrical field alignment vernier
US6762432B2 · kind B2 · utility
0Cited by
2References
8Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Apr 1, 2002 |
| Grant date | Jul 13, 2004 |
| Priority date | — |
| Expiry date | Sep 12, 2022 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/70658
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A test structure pattern includes a first comb having a first set of tines, and a second comb having a second set of tines of the same width and spacing as the first set of tines. When the test structure pattern is stepped between fields on a wafer, the first comb and the second comb at least partially overlap on photoresist over a scribe lane between the fields. When the photoresist is developed, the overlap of the first comb and the second comb generates a metal comb. Electrical continuity is checked for the metal tines of the metal comb to determine the misalignment of the fields.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.