Method to improve the resolution of a photolithography system by use of a coupling layer between the photo resist and the ARC
US6764749B2 · kind B2 · utility
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2References
16Claims
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Key dates
| Filing date | Jul 29, 2002 |
| Grant date | Jul 20, 2004 |
| Priority date | — |
| Expiry date | Aug 21, 2022 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/31504
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A method to improve the resolution of a photolithography system by using one or more coupling layers between a photo resist and an anti-reflective coating. The coupling layer(s) compensate for a mis-match in indexes of reflection between the photo resist and anti-reflective coating and minimize the amount of energy which is reflected back into the photo resist, thereby improving the quality of the resulting image which is formed on the photo resist during the process.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.