BST on low-loss substrates for frequency agile applications
US6764864B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 17, 2003 |
| Grant date | Jul 20, 2004 |
| Priority date | — |
| Expiry date | Apr 17, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02293
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An exemplary system and method for providing a microwave regime, frequency-agile device is disclosed as comprising inter alia: a low-loss, insulating substrate (200); a layer of SiO2 (210) over the surface of said substrate; and a layer of BST (220) deposited over the SiO2 layer (210). Disclosed features and specifications may be variously controlled, configured, adapted or otherwise optionally modified to further improve or otherwise optimize frequency response or other material characteristics. Exemplary embodiments of the present invention representatively provide for integrated high-efficiency, low-loss microwave components that may be readily incorporated with existing technologies for the improvement of frequency response, device package form factors, weights and/or other manufacturing, device or material performance metrics.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.