Freeescale Semiconductor, Inc.
5,535Patents
4,316Active
5,535Granted
62Portfolio score
Filing activity: Dec 23, 1997 → Jul 19, 2016 · 2,263 expiring within 5 years
Most-cited patents
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US7132360B2 | Method for treating a semiconductor surface to form a metal-containing layer | Chemistry; Metallurgy | 570 | Expired |
| US7575968B2 | Inverse slope isolation and dual surface orientation integration | Electricity | 516 | Active |
| US9165023B2 | Integrated circuit device and method for determining an index of an extreme value within an array of values | Physics | 407 | Active |
| US7030469B2 | Method of forming a semiconductor package and structure thereof | Electricity | 274 | Expired |
| US7777330B2 | High bandwidth cache-to-processing unit communication in a multiple processor/cache system | Electricity | 263 | Active |
| US6838776B2 | Circuit device with at least partial packaging and method for forming | Electricity | 237 | Expired |
| US7504302B2 | Process of forming a non-volatile memory cell including a capacitor structure | Electricity | 229 | Active |
| US6921975B2 | Circuit device with at least partial packaging, exposed active surface and a voltage reference plane | Electricity | 188 | Expired |
| US6834073B1 | System and method for baseband removal of narrowband interference in ultra wideband signals | Electricity | 179 | Expired |
| US6838322B2 | Method for forming a double-gated semiconductor device | Electricity | 176 | Expired |
| US7015075B2 | Die encapsulation using a porous carrier | Electricity | 173 | Expired |
| US6861689B2 | One transistor DRAM cell structure and method for forming | Physics | 150 | Expired |
| US7412008B2 | Programmable phase mapping and phase rotation modulator and method | Electricity | 145 | Expired |
| US7100020B1 | Digital communications processor | Electricity | 138 | Expired |
| US6835423B2 | Method of fabricating a magnetic element with insulating veils | Emerging Cross-Sectional Technologies | 134 | Expired |
| US6963090B2 | Enhancement mode metal-oxide-semiconductor field effect transistor | Electricity | 129 | Expired |
| US6774497B1 | Flip-chip assembly with thin underfill and thick solder mask | Electricity | 129 | Expired |
| US6792502B1 | Microprocessor having a content addressable memory (CAM) device as a functional unit therein and method of operation | Physics | 128 | Expired |
| US6893947B2 | Advanced RF enhancement-mode FETs with improved gate properties | Electricity | 123 | Expired |
| US7226833B2 | Semiconductor device structure and method therefor | Electricity | 122 | Expired |
| US7119381B2 | Complementary metal-oxide-semiconductor field effect transistor structure having ion implant in only one of the complementary devices | Electricity | 121 | Expired |
| US7058414B1 | Method and system for enabling device functions based on distance information | Electricity | 113 | Expired |
| US7042765B2 | Memory bit line segment isolation | Physics | 108 | Expired |
| US8115499B2 | Device with proximity detection capability | Emerging Cross-Sectional Technologies | 108 | Active |
| US7344917B2 | Method for packaging a semiconductor device | Electricity | 107 | Expired |
Source: USPTO / EPO open patent data. Counts and citation impact are objective bibliographic measures.