Semiconductor wafer including a low dielectric constant thermosetting polymer film and method of making same
US6764873B2 · kind B2 · utility
2Cited by
5References
3Claims
0Family size
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Key dates
| Filing date | Jul 18, 2002 |
| Grant date | Jul 20, 2004 |
| Priority date | — |
| Expiry date | Jan 2, 2023 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/31721
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor wafer provided with a thermosetting porous insulating film, wherein the insulating film is made porous, cured and polymerized on the wafer. The film is characterized by a very low dielectric constant based on its constituency and porosity, the latter property of which is caused by the inclusion of liquid or supercritical carbon dioxide in the polymeric reaction mixture.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.