Manufacturing method of semiconductor device
US6764886B2 · kind B2 · utility
26Cited by
4References
14Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 10, 2002 |
| Grant date | Jul 20, 2004 |
| Priority date | — |
| Expiry date | Jan 4, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/673
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Island-like semiconductor films and markers are formed prior to laser irradiation. Markers are used as positional references so as not to perform laser irradiation all over the semiconductor within a substrate surface, but to perform a minimum crystallization on at least indispensable portion. Since the time required for laser crystallization can be reduced, it is possible to increase the substrate processing speed. By applying the above-described constitution to a conventional SLS method, a means for solving such problem in the conventional SLS method that the substrate processing efficiency is insufficient, is provided.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.