Structure of semiconductor device and method for manufacturing the same
US6764910B2 · kind B2 · utility
3Cited by
1References
22Claims
0Family size
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Key dates
| Filing date | Feb 21, 2003 |
| Grant date | Jul 20, 2004 |
| Priority date | — |
| Expiry date | Feb 21, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/038
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device and a method for manufacturing the same are provided. The structure of a semiconductor device includes gate electrodes having a T-shaped structure comprised of first and second gate electrodes having low gate resistance and low parasitic capacitance and a halo ion-implanted region in which a short channel effect can be effectively suppressed. The method for manufacturing the device is capable of performing high angle ion implantation without extending gate-to-gate space.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.