Manufacturing method for semiconductor device
US6764916B1 · kind B1 · utility
7Cited by
9References
14Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 29, 1999 |
| Grant date | Jul 20, 2004 |
| Priority date | — |
| Expiry date | Sep 29, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B12/312
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A manufacturing method for a semiconductor device, including forming on or above a semiconductor substrate a silicon film a surface of which has a first polycrystalline silicon film with mushroom or hemisphere-shaped crystal grains, and forming a Ta2O5 film on the silicon film at a pressure of 40 Pa or lower and at a temperature of 480° C. or lower, using a gas obtained by vaporizing Ta(OC2H5)5 as a tantalum source gas.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.