Method for obtaining high quality InGaAsN semiconductor devices
US6764926B2 · kind B2 · utility
20Cited by
5References
20Claims
0Family size
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Key dates
| Filing date | Mar 25, 2002 |
| Grant date | Jul 20, 2004 |
| Priority date | — |
| Expiry date | Jun 15, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0262
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for making high quality InGaAsN semiconductor devices is presented. The method allows the making of high quality InGaAsN semiconductor devices using a single MOCVD reactor while avoiding aluminum contamination.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.