Method of forming a metal gate electrode
US6764961B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 6, 2001 |
| Grant date | Jul 20, 2004 |
| Priority date | — |
| Expiry date | Nov 6, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/32105
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention includes a method of forming a metal gate electrode on which whiskers are not formed after performing a selective oxidation process and a subsequent heating process. The metal gate electrode is formed by forming a metal gate electrode pattern which is comprised of a polysilicon layer and a metal layer, and performing a selective oxidation process. After the selective oxidation process, the metal gate electrode undergoes a subsequent heating treatment. The selective oxidation process is carried out in a nitrogen containing gas ambient, so that a metal oxide layer is minimally formed on the metal layer. As a result, it is prevented from causing whiskers on the metal layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.