Inventor · Lagrangeville, NY, US

Ja-Hum Ku

44Patents
11h-index
78Co-inventors
78Inventor score

Filing activity: Sep 29, 1998 → May 30, 2018

Most-cited inventions

PatentTitleAreaCited byStatus
US9508727B2 Integrated circuit device and method of manufacturing the same Electricity 35 Active
US6383877B1 Method of forming T-shaped isolation layer, method of forming elevated salicide source/drain region using the same, and semiconductor device having T-shaped isolation layer Electricity 30 Expired
US7911001B2 Methods for forming self-aligned dual stress liners for CMOS semiconductor devices Electricity 23 Active
US6329276A Method of forming self-aligned silicide in semiconductor device Electricity 22 Expired
US6936528B2 Method of forming cobalt silicide film and method of manufacturing semiconductor device having cobalt silicide film Electricity 21 Expired
US7084061B2 Methods of fabricating a semiconductor device having MOS transistor with strained channel Electricity 18 Expired
US7297584B2 Methods of fabricating semiconductor devices having a dual stress liner Electricity 17 Expired
US6624496B2 Method of forming T-shaped isolation layer, method of forming elevated salicide source/drain region using the same, and semiconductor device having T-shaped isolation layer Electricity 17 Expired
US7586175B2 Semiconductor wafer having embedded electroplating current paths to provide uniform plating over wafer surface Electricity 15 Active
US7514354B2 Methods for forming damascene wiring structures having line and plug conductors formed from different materials Electricity 15 Expired
US7615432B2 HDP/PECVD methods of fabricating stress nitride structures for field effect transistors Electricity 12 Active
US7534678B2 Methods of forming CMOS integrated circuit devices having stressed NMOS and PMOS channel regions therein and circuits formed thereby Electricity 11 Active
US6764961B2 Method of forming a metal gate electrode Electricity 10 Expired
US7781322B2 Nickel alloy salicide transistor structure and method for manufacturing same Electricity 8 Expired
US10014304B2 Integrated circuit device and method of manufacturing the same Electricity 8 Active
US7109104B2 Methods of fabricating a semiconductor device having a metal gate pattern Electricity 8 Expired
US6218690A Transistor having reverse self-aligned structure Electricity 6 Expired
US8016941B2 Method and apparatus for manufacturing a semiconductor Electricity 6 Active
US6960515B2 Method of forming a metal gate Electricity 5 Expired
US7232756B2 Nickel salicide process with reduced dopant deactivation Electricity 5 Expired
US7816271B2 Methods for forming contacts for dual stress liner CMOS semiconductor devices Electricity 5 Active
US6797559B2 Method of fabricating semiconductor device having metal conducting layer Electricity 5 Expired
US7598572B2 Silicided polysilicon spacer for enhanced contact area Electricity 3 Active
US7576407B2 Devices and methods for constructing electrically programmable integrated fuses for low power applications Electricity 3 Active
US8008177B2 Method for fabricating semiconductor device using a nickel salicide process Electricity 3 Active

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.