Method for forming low thermal budget sacrificial oxides
US6764967B2 · kind B2 · utility
7Cited by
5References
14Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 5, 2002 |
| Grant date | Jul 20, 2004 |
| Priority date | — |
| Expiry date | Oct 5, 2022 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/906
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for forming a silicon dioxide layer over a silicon substrate including providing a substrate having exposed silicon portions; and, forming a silicon dioxide layer over the exposed silicon portions according to an oxide formation process including contacting the exposed silicon portions with an oxidizing solution comprising water and ozone.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.