Npn double heterostructure bipolar transistor with ingaasn base region
US6765242B1 · kind B1 · utility
25Cited by
11References
55Claims
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Key dates
| Filing date | Apr 11, 2000 |
| Grant date | Jul 20, 2004 |
| Priority date | — |
| Expiry date | Apr 2, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/8503
Abstract
An NPN double heterostructure bipolar transistor (DHBT) is disclosed with a base region comprising a layer of p-type-doped indium gallium arsenide nitride (InGaAsN) sandwiched between n-type-doped collector and emitter regions. The use of InGaAsN for the base region lowers the transistor turn-on voltage, Von, thereby reducing power dissipation within the device. The NPN transistor, which has applications for forming low-power electronic circuitry, is formed on a gallium arsenide (GaAs) substrate and can be fabricated at commercial GaAs foundries. Methods for fabricating the NPN transistor are also disclosed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.